According to our latest research, the global Wide Bandgap (WBG) Semiconductor Material market size will reach USD 2130 million in 2031, growing at a CAGR of 13.9% over the analysis period.

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Wide band semiconductor materials are semiconductor materials with a band width of 2.3eV and above, typically silicon carbide (SiC) and gallium nitride (GaN). Broadband semiconductor materials generally have much higher critical avalanche breakdown electric field strength and carrier saturation drift rate, higher thermal conductivity and carrier mobility than silicon, therefore, power electronic devices based on broadband semiconductor materials (such as silicon carbide) will have much higher tolerance to high voltage, much lower through-state resistance, better thermal conductivity and thermal stability, and stronger resistance to high temperatures and radiation, and many aspects of performance are improved by orders of magnitude.

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Wide band semiconductor materials are semiconductor materials with a band width of 2.3eV and above, typically silicon carbide (SiC) and gallium nitride (GaN). Broadband semiconductor materials generally have much higher critical avalanche breakdown electric field strength and carrier saturation drift rate, higher thermal conductivity and carrier mobility than silicon, therefore, power electronic devices based on broadband semiconductor materials (such as silicon carbide) will have much higher tolerance to high voltage, much lower through-state resistance, better thermal conductivity and thermal stability, and stronger resistance to high temperatures and radiation, and many aspects of performance are improved by orders of magnitude.

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According to our (Global Info Research) latest study, the global Wide Bandgap (WBG) Semiconductor Material market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

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The global Wide Bandgap (WBG) Semiconductor Material market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

USD4480.00

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Wide band semiconductor materials are semiconductor materials with a band width of 2.3eV and above, typically silicon carbide (SiC) and gallium nitride (GaN). Broadband semiconductor materials generally have much higher critical avalanche breakdown electric field strength and carrier saturation drift rate, higher thermal conductivity and carrier mobility than silicon, therefore, power electronic devices based on broadband semiconductor materials (such as silicon carbide) will have much higher tolerance to high voltage, much lower through-state resistance, better thermal conductivity and thermal stability, and stronger resistance to high temperatures and radiation, and many aspects of performance are improved by orders of magnitude.

USD3480.00

Add To Cart